DEVELOPMENT OF A VERSATILE PHYSICS-BASED FINITE- ELEMENT MODEL OF AN AlGaN/GaN HEMT CAPABLE OF ACCOMODATING PROCESS AND EPITAXY VARIATIONS AND CALIBRATED USING MULTIPLE DC PARAMATERS (Postprint)
نویسندگان
چکیده
We present a physics-based finite-element model of operation of an AlGaN/GaN HEMT with device geometry inputs taken from transmission electron microscope cross sections and calibrated by comparison with measured electrical data comprising standard field-effect transistor metrics and less wellknown model parameters. A variety of electrical outputs from the model are compared to experiment, and the level of agreement is reported.
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